Rochester Electronics, LLC NDBA180N10BT4H
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NDBA180N10BT4H
2071-NDBA180N10BT4H
晶体管 - FET,MOSFET - 单个
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
大陆
立即发货

POWER FIELD-EFFECT TRANSISTOR
1最小包装量--
NDBA180N10BT4H详情
Rochester Electronics, LLC NDBA180N10BT4H重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
供应商器件包装
D2PAK (TO-263)
Current - Continuous Drain (Id) @ 25℃
180A Ta
Drive Voltage (Max Rds On, Min Rds On)
10V 15V
Power Dissipation (Max)
200W Tc
操作温度
175°C TJ
包装
Tape & Reel (TR)
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
2.8mOhm @ 50A, 15V
不同 Id 时 Vgs(th)(最大值)
4V @ 1mA
输入电容(Ciss)(Max)@Vds
6.95pF @ 50V
门极电荷(Qg)(最大)@Vgs
95nC @ 10V
漏源电压 (Vdss)
100V
Vgs(最大值)
±20V
RoHS状态
ROHS3 Compliant
NDBA180N10BT4H拓展信息
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics








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