Rochester Electronics, LLC NDD01N60T4G
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NDD01N60T4G
2071-NDD01N60T4G
晶体管 - FET,MOSFET - 单个
TO-252-3, DPak (2 Leads + Tab), SC-63
大陆
立即发货

N-CHANNEL POWER MOSFET
1最小包装量--
NDD01N60T4G详情
Rochester Electronics, LLC NDD01N60T4G重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
TO-252-3, DPak (2 Leads + Tab), SC-63
供应商器件包装
DPAK
Current - Continuous Drain (Id) @ 25℃
1.5A Tc
Drive Voltage (Max Rds On, Min Rds On)
10V
Power Dissipation (Max)
46W Tc
操作温度
-55°C~150°C TJ
包装
Tape & Reel (TR)
零件状态
Obsolete
湿度敏感性等级(MSL)
3 (168 Hours)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
8.5Ohm @ 200mA, 10V
不同 Id 时 Vgs(th)(最大值)
3.7V @ 50μA
输入电容(Ciss)(Max)@Vds
160pF @ 25V
门极电荷(Qg)(最大)@Vgs
7.2nC @ 10V
漏源电压 (Vdss)
600V
Vgs(最大值)
±30V
RoHS状态
ROHS3 Compliant
NDD01N60T4G拓展信息
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics








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