Rochester Electronics, LLC NDD60N360U1T4G
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NDD60N360U1T4G
2071-NDD60N360U1T4G
晶体管 - FET,MOSFET - 单个
TO-252-3, DPak (2 Leads + Tab), SC-63
大陆
立即发货

N-CHANNEL POWER MOSFET
1最小包装量--
NDD60N360U1T4G详情
Rochester Electronics, LLC NDD60N360U1T4G重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
TO-252-3, DPak (2 Leads + Tab), SC-63
供应商器件包装
DPAK
Current - Continuous Drain (Id) @ 25℃
11A Tc
Drive Voltage (Max Rds On, Min Rds On)
10V
Power Dissipation (Max)
114W Tc
操作温度
-55°C~150°C TJ
包装
Tape & Reel (TR)
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
360mOhm @ 5.5A, 10V
不同 Id 时 Vgs(th)(最大值)
4V @ 250μA
输入电容(Ciss)(Max)@Vds
790pF @ 50V
门极电荷(Qg)(最大)@Vgs
26nC @ 10V
漏源电压 (Vdss)
600V
Vgs(最大值)
±25V
RoHS状态
ROHS3 Compliant
NDD60N360U1T4G拓展信息
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics








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