Rochester Electronics, LLC NDD60N745U1-35G
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NDD60N745U1-35G
2071-NDD60N745U1-35G
晶体管 - FET,MOSFET - 单个
TO-251-3 Short Leads, IPak, TO-251AA
大陆
立即发货

POWER FIELD-EFFECT TRANSISTOR
1最小包装量--
NDD60N745U1-35G详情
Rochester Electronics, LLC NDD60N745U1-35G重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
通孔
包装/外壳
TO-251-3 Short Leads, IPak, TO-251AA
供应商器件包装
I-PAK
Current - Continuous Drain (Id) @ 25℃
6.6A Tc
Drive Voltage (Max Rds On, Min Rds On)
10V
Power Dissipation (Max)
84W Tc
操作温度
-55°C~150°C TJ
包装
Tube
零件状态
Obsolete
湿度敏感性等级(MSL)
3 (168 Hours)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
745mOhm @ 3.25A, 10V
不同 Id 时 Vgs(th)(最大值)
4V @ 250μA
输入电容(Ciss)(Max)@Vds
440pF @ 50V
门极电荷(Qg)(最大)@Vgs
15nC @ 10V
漏源电压 (Vdss)
600V
Vgs(最大值)
±25V
RoHS状态
ROHS3 Compliant
NDD60N745U1-35G拓展信息
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics








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