Rochester Electronics, LLC NDDL01N60Z-1G
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NDDL01N60Z-1G
2071-NDDL01N60Z-1G
晶体管 - FET,MOSFET - 单个
TO-251-3 Short Leads, IPak, TO-251AA
大陆
立即发货

POWER FIELD-EFFECT TRANSISTOR
1最小包装量--
NDDL01N60Z-1G详情
Rochester Electronics, LLC NDDL01N60Z-1G重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-251-3 Short Leads, IPak, TO-251AA
安装类型
通孔
供应商器件包装
IPAK (TO-251)
Power Dissipation (Max)
26W Tc
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
4.5V @ 50μA
Current - Continuous Drain (Id) @ 25℃
800mA Ta
Drive Voltage (Max Rds On, Min Rds On)
10V
包装
Tube
操作温度
-55°C~150°C TJ
零件状态
Obsolete
湿度敏感性等级(MSL)
3 (168 Hours)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
15Ohm @ 400mA, 10V
输入电容(Ciss)(Max)@Vds
92pF @ 25V
门极电荷(Qg)(最大)@Vgs
4.9nC @ 10V
漏源电压 (Vdss)
600V
Vgs(最大值)
±30V
RoHS状态
Non-RoHS Compliant
NDDL01N60Z-1G拓展信息
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics








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