Rochester Electronics, LLC NDDL01N60ZT4G
- 收藏
- 对比
NDDL01N60ZT4G
2071-NDDL01N60ZT4G
晶体管 - FET,MOSFET - 单个
TO-252-3, DPak (2 Leads + Tab), SC-63
大陆
立即发货

POWER FIELD-EFFECT TRANSISTOR
1最小包装量--
NDDL01N60ZT4G详情
Rochester Electronics, LLC NDDL01N60ZT4G重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
TO-252-3, DPak (2 Leads + Tab), SC-63
供应商器件包装
DPAK
Current - Continuous Drain (Id) @ 25℃
800mA Ta
Drive Voltage (Max Rds On, Min Rds On)
10V
Power Dissipation (Max)
26W Tc
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
4.5V @ 50μA
操作温度
-55°C~150°C TJ
包装
Tape & Reel (TR)
零件状态
Obsolete
湿度敏感性等级(MSL)
3 (168 Hours)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
15Ohm @ 400mA, 10V
输入电容(Ciss)(Max)@Vds
92pF @ 25V
门极电荷(Qg)(最大)@Vgs
4.9nC @ 10V
漏源电压 (Vdss)
600V
Vgs(最大值)
±30V
RoHS状态
ROHS3 Compliant
NDDL01N60ZT4G拓展信息
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics








哦! 它是空的。