Rochester Electronics, LLC NTB6412ANT4G
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NTB6412ANT4G
2071-NTB6412ANT4G
晶体管 - FET,MOSFET - 单个
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
大陆
立即发货

N-CHANNEL POWER MOSFET
1最小包装量--
NTB6412ANT4G详情
Rochester Electronics, LLC NTB6412ANT4G重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
安装类型
表面贴装
供应商器件包装
D2PAK
Power Dissipation (Max)
167W Tc
Drive Voltage (Max Rds On, Min Rds On)
10V
Current - Continuous Drain (Id) @ 25℃
58A Tc
包装
Tape & Reel (TR)
操作温度
-55°C~175°C TJ
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
18.2mOhm @ 58A, 10V
不同 Id 时 Vgs(th)(最大值)
4V @ 250μA
输入电容(Ciss)(Max)@Vds
3.5pF @ 25V
门极电荷(Qg)(最大)@Vgs
100nC @ 10V
漏源电压 (Vdss)
100V
Vgs(最大值)
±20V
RoHS状态
ROHS3 Compliant
NTB6412ANT4G拓展信息
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics







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