Rochester Electronics, LLC NTMSD6N303R2G
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NTMSD6N303R2G
2071-NTMSD6N303R2G
晶体管 - FET,MOSFET - 单个
8-SOIC (0.154, 3.90mm Width)
大陆
立即发货

N-CHANNEL POWER MOSFET
1最小包装量--
NTMSD6N303R2G详情
Rochester Electronics, LLC NTMSD6N303R2G重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
8-SOIC (0.154, 3.90mm Width)
供应商器件包装
8-SOIC
Current - Continuous Drain (Id) @ 25℃
6A Ta
Drive Voltage (Max Rds On, Min Rds On)
4.5V 10V
Power Dissipation (Max)
2W Ta
操作温度
-55°C~150°C TJ
包装
Tape & Reel (TR)
系列
FETKY™
零件状态
Obsolete
湿度敏感性等级(MSL)
3 (168 Hours)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
32mOhm @ 6A, 10V
不同 Id 时 Vgs(th)(最大值)
2.5V @ 250μA
输入电容(Ciss)(Max)@Vds
950pF @ 24V
门极电荷(Qg)(最大)@Vgs
30nC @ 10V
漏源电压 (Vdss)
30V
Vgs(最大值)
±20V
场效应管特性
Schottky Diode (Isolated)
RoHS状态
ROHS3 Compliant
NTMSD6N303R2G拓展信息
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics








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