Rochester Electronics, LLC NTP8G206NG
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NTP8G206NG
2071-NTP8G206NG
晶体管 - FET,MOSFET - 单个
TO-220-3
大陆
立即发货

POWER FIELD-EFFECT TRANSISTOR
1最小包装量--
NTP8G206NG详情
Rochester Electronics, LLC NTP8G206NG重要参数规格及、参数值,及相似型号如下:
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- 参数名参数值全选
安装类型
通孔
包装/外壳
TO-220-3
供应商器件包装
TO-220-3
Current - Continuous Drain (Id) @ 25℃
17A Tc
Drive Voltage (Max Rds On, Min Rds On)
8V
Power Dissipation (Max)
96W Tc
操作温度
-55°C~150°C TJ
包装
Tube
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
180mOhm @ 11A, 8V
不同 Id 时 Vgs(th)(最大值)
2.6V @ 500μA
输入电容(Ciss)(Max)@Vds
760pF @ 480V
门极电荷(Qg)(最大)@Vgs
9.3nC @ 4.5V
漏源电压 (Vdss)
600V
Vgs(最大值)
±18V
RoHS状态
Non-RoHS Compliant
NTP8G206NG拓展信息
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics








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