Rochester Electronics, LLC NTTFS5826NLTWG
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NTTFS5826NLTWG
2071-NTTFS5826NLTWG
晶体管 - FET,MOSFET - 单个
8-PowerWDFN
大陆
立即发货

N-CHANNEL POWER MOSFET
1最小包装量--
NTTFS5826NLTWG详情
Rochester Electronics, LLC NTTFS5826NLTWG重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
8-PowerWDFN
供应商器件包装
8-WDFN (3.3x3.3)
Current - Continuous Drain (Id) @ 25℃
8A Ta
Drive Voltage (Max Rds On, Min Rds On)
4.5V 10V
Power Dissipation (Max)
3.1W Ta 19W Tc
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
3V @ 250μA
操作温度
-55°C~175°C TJ
包装
Tape & Reel (TR)
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
24mOhm @ 7.5A, 10V
输入电容(Ciss)(Max)@Vds
850pF @ 25V
门极电荷(Qg)(最大)@Vgs
25nC @ 10V
漏源电压 (Vdss)
60V
Vgs(最大值)
±20V
RoHS状态
ROHS3 Compliant
NTTFS5826NLTWG拓展信息
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics







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