Rochester Electronics, LLC NVB5860NLT4G
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NVB5860NLT4G
2071-NVB5860NLT4G
晶体管 - FET,MOSFET - 单个
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
大陆
立即发货

N-CHANNEL POWER MOSFET
1最小包装量--
NVB5860NLT4G详情
Rochester Electronics, LLC NVB5860NLT4G重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
供应商器件包装
D2PAK-3
Current - Continuous Drain (Id) @ 25℃
220A Ta
Drive Voltage (Max Rds On, Min Rds On)
4.5V 10V
Power Dissipation (Max)
283W Tc
操作温度
-55°C~175°C TJ
包装
Tape & Reel (TR)
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
3mOhm @ 20A, 10V
不同 Id 时 Vgs(th)(最大值)
3V @ 250μA
输入电容(Ciss)(Max)@Vds
13.216pF @ 25V
门极电荷(Qg)(最大)@Vgs
220nC @ 10V
漏源电压 (Vdss)
60V
Vgs(最大值)
±20V
RoHS状态
ROHS3 Compliant
NVB5860NLT4G拓展信息
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics







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