Rochester Electronics, LLC NVB60N06T4G
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NVB60N06T4G
2071-NVB60N06T4G
晶体管 - FET,MOSFET - 单个
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
大陆
立即发货

N-CHANNEL POWER MOSFET
1最小包装量--
NVB60N06T4G详情
Rochester Electronics, LLC NVB60N06T4G重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
供应商器件包装
D2PAK
Current - Continuous Drain (Id) @ 25℃
60A Ta
Power Dissipation (Max)
2.4W Ta 150W Tj
包装
Tape & Reel (TR)
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
14mOhm @ 30A, 10V
不同 Id 时 Vgs(th)(最大值)
4V @ 250μA
输入电容(Ciss)(Max)@Vds
3.22pF @ 25V
门极电荷(Qg)(最大)@Vgs
81nC @ 10V
漏源电压 (Vdss)
60V
RoHS状态
Non-RoHS Compliant
NVB60N06T4G拓展信息
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics







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