Rochester Electronics, LLC PSMN8R0-30YL,115
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PSMN8R0-30YL,115
2071-PSMN8R0-30YL,115
晶体管 - FET,MOSFET - 单个
SC-100, SOT-669
大陆
立即发货

N-CHANNEL POWER MOSFET
1最小包装量--
PSMN8R0-30YL,115详情
Rochester Electronics, LLC PSMN8R0-30YL,115重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
SC-100, SOT-669
供应商器件包装
LFPAK56, Power-SO8
Current - Continuous Drain (Id) @ 25℃
62A Tc
Drive Voltage (Max Rds On, Min Rds On)
4.5V 10V
Power Dissipation (Max)
56W Tc
操作温度
-55°C~175°C TJ
包装
Tape & Reel (TR)
系列
TrenchMOS™
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
8.3mOhm @ 15A, 10V
不同 Id 时 Vgs(th)(最大值)
2.15V @ 1mA
输入电容(Ciss)(Max)@Vds
1.005pF @ 15V
门极电荷(Qg)(最大)@Vgs
18.3nC @ 10V
漏源电压 (Vdss)
30V
Vgs(最大值)
±20V
RoHS状态
ROHS3 Compliant
PSMN8R0-30YL,115拓展信息
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics








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