Rochester Electronics, LLC PSMN8R5-100XSQ
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PSMN8R5-100XSQ
2071-PSMN8R5-100XSQ
晶体管 - FET,MOSFET - 单个
TO-220-3 Full Pack, Isolated Tab
大陆
立即发货

N-CHANNEL POWER MOSFET
1最小包装量--
PSMN8R5-100XSQ详情
Rochester Electronics, LLC PSMN8R5-100XSQ重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
通孔
包装/外壳
TO-220-3 Full Pack, Isolated Tab
供应商器件包装
TO-220F
Current - Continuous Drain (Id) @ 25℃
49A Tj
Drive Voltage (Max Rds On, Min Rds On)
10V
Power Dissipation (Max)
55W Tc
操作温度
-55°C~175°C TJ
包装
Tube
零件状态
最后一次购买
湿度敏感性等级(MSL)
1 (Unlimited)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
8.5mOhm @ 10A, 10V
不同 Id 时 Vgs(th)(最大值)
4V @ 1mA
输入电容(Ciss)(Max)@Vds
5.512pF @ 50V
门极电荷(Qg)(最大)@Vgs
100nC @ 10V
漏源电压 (Vdss)
100V
Vgs(最大值)
±20V
RoHS状态
ROHS3 Compliant
PSMN8R5-100XSQ拓展信息
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics








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