Rochester Electronics, LLC RFD3055LESM
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RFD3055LESM
2071-RFD3055LESM
晶体管 - FET,MOSFET - 单个
TO-252-3, DPak (2 Leads + Tab), SC-63
大陆
立即发货

N-CHANNEL POWER MOSFET
1最小包装量--
RFD3055LESM详情
Rochester Electronics, LLC RFD3055LESM重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Continuous Drain (Id) @ 25℃
11A Tc
Drive Voltage (Max Rds On, Min Rds On)
5V
Power Dissipation (Max)
38W Tc
操作温度
-55°C~175°C TJ
包装
Tube
无铅代码
yes
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
107m Ω @ 8A, 5V
不同 Id 时 Vgs(th)(最大值)
3V @ 250μA
输入电容(Ciss)(Max)@Vds
350pF @ 25V
门极电荷(Qg)(最大)@Vgs
11.3nC @ 10V
漏源电压 (Vdss)
60V
Vgs(最大值)
±16V
RoHS状态
ROHS3 Compliant
RFD3055LESM拓展信息
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics








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