Rochester Electronics, LLC RFD4N06LSM9A
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RFD4N06LSM9A
2071-RFD4N06LSM9A
晶体管 - FET,MOSFET - 单个
TO-252-3, DPak (2 Leads + Tab), SC-63
大陆
立即发货

N-CHANNEL POWER MOSFET
1最小包装量--
RFD4N06LSM9A详情
Rochester Electronics, LLC RFD4N06LSM9A重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
TO-252-3, DPak (2 Leads + Tab), SC-63
引脚数
3
Current - Continuous Drain (Id) @ 25℃
4A Tc
Drive Voltage (Max Rds On, Min Rds On)
5V
Power Dissipation (Max)
30W Tc
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
2.5V @ 250μA
操作温度
-55°C~175°C TJ
包装
Tape & Reel (TR)
无铅代码
no
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
600m Ω @ 1A, 5V
门极电荷(Qg)(最大)@Vgs
8nC @ 10V
漏源电压 (Vdss)
60V
Vgs(最大值)
±10V
达到SVHC
unknown
RoHS状态
ROHS3 Compliant
RFD4N06LSM9A拓展信息
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics








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