Rochester Electronics, LLC SPB12N50C3ATMA1
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SPB12N50C3ATMA1
2071-SPB12N50C3ATMA1
晶体管 - FET,MOSFET - 单个
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
大陆
立即发货

N-CHANNEL POWER MOSFET
1最小包装量--
SPB12N50C3ATMA1详情
Rochester Electronics, LLC SPB12N50C3ATMA1重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
安装类型
表面贴装
供应商器件包装
PG-TO263-3-2
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
3.9V @ 500μA
Power Dissipation (Max)
125W Tc
Drive Voltage (Max Rds On, Min Rds On)
10V
Current - Continuous Drain (Id) @ 25℃
11.6A Tc
系列
CoolMOS™
包装
Tape & Reel (TR)
操作温度
-55°C~150°C TJ
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
380mOhm @ 7A, 10V
输入电容(Ciss)(Max)@Vds
1.2pF @ 25V
门极电荷(Qg)(最大)@Vgs
49nC @ 10V
漏源电压 (Vdss)
560V
Vgs(最大值)
±20V
RoHS状态
ROHS3 Compliant
SPB12N50C3ATMA1拓展信息
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics








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