Rochester Electronics, LLC SPD30N03S2L20GBTMA1
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SPD30N03S2L20GBTMA1
2071-SPD30N03S2L20GBTMA1
晶体管 - FET,MOSFET - 单个
TO-252-3, DPak (2 Leads + Tab), SC-63
大陆
立即发货

N-CHANNEL POWER MOSFET
1最小包装量--
SPD30N03S2L20GBTMA1详情
Rochester Electronics, LLC SPD30N03S2L20GBTMA1重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
TO-252-3, DPak (2 Leads + Tab), SC-63
供应商器件包装
PG-TO252-3
Current - Continuous Drain (Id) @ 25℃
30A Tc
Drive Voltage (Max Rds On, Min Rds On)
4.5V 10V
Power Dissipation (Max)
60W Tc
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
2V @ 23μA
操作温度
-55°C~175°C TJ
包装
Tape & Reel (TR)
系列
OptiMOS™
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
20mOhm @ 18A, 10V
输入电容(Ciss)(Max)@Vds
700pF @ 25V
门极电荷(Qg)(最大)@Vgs
19nC @ 10V
漏源电压 (Vdss)
30V
Vgs(最大值)
±20V
RoHS状态
Non-RoHS Compliant
SPD30N03S2L20GBTMA1拓展信息
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics








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