Rochester Electronics, LLC SPI08N50C3XKSA1
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SPI08N50C3XKSA1
2071-SPI08N50C3XKSA1
晶体管 - FET,MOSFET - 单个
TO-262-3 Long Leads, I2Pak, TO-262AA
大陆
立即发货

N-CHANNEL POWER MOSFET
1最小包装量--
SPI08N50C3XKSA1详情
Rochester Electronics, LLC SPI08N50C3XKSA1重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
通孔
包装/外壳
TO-262-3 Long Leads, I2Pak, TO-262AA
供应商器件包装
PG-TO262-3-1
Current - Continuous Drain (Id) @ 25℃
7.6A Tc
Drive Voltage (Max Rds On, Min Rds On)
10V
Power Dissipation (Max)
83W Tc
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
3.9V @ 350μA
操作温度
-55°C~150°C TJ
包装
Tube
系列
CoolMOS™
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
600mOhm @ 4.6A, 10V
输入电容(Ciss)(Max)@Vds
750pF @ 25V
门极电荷(Qg)(最大)@Vgs
32nC @ 10V
漏源电压 (Vdss)
560V
Vgs(最大值)
±20V
RoHS状态
ROHS3 Compliant
SPI08N50C3XKSA1拓展信息
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics







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