Rochester Electronics, LLC SSR1N60BTM-WS
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SSR1N60BTM-WS
2071-SSR1N60BTM-WS
晶体管 - FET,MOSFET - 单个
TO-252-3, DPak (2 Leads + Tab), SC-63
大陆
立即发货

POWER, N-CHANNEL, MOSFET
1最小包装量--
SSR1N60BTM-WS详情
Rochester Electronics, LLC SSR1N60BTM-WS重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
TO-252-3, DPak (2 Leads + Tab), SC-63
供应商器件包装
D-Pak
Current - Continuous Drain (Id) @ 25℃
900mA Tc
Drive Voltage (Max Rds On, Min Rds On)
10V
Power Dissipation (Max)
2.5W Ta 28W Tc
操作温度
-55°C~150°C TJ
包装
Tape & Reel (TR)
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
12Ohm @ 450mA, 10V
不同 Id 时 Vgs(th)(最大值)
4V @ 250μA
输入电容(Ciss)(Max)@Vds
215pF @ 25V
门极电荷(Qg)(最大)@Vgs
7.7nC @ 10V
漏源电压 (Vdss)
600V
Vgs(最大值)
±30V
RoHS状态
ROHS3 Compliant
SSR1N60BTM-WS拓展信息
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics








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