Samsung Electronics M378B1G73BH0-CH9
- 收藏
- 对比
M378B1G73BH0-CH9
2107-M378B1G73BH0-CH9
存储卡
--
大陆
立即发货

DRAM Module DDR3 SDRAM 8Gbyte 240UDIMM
1最小包装量--
M378B1G73BH0-CH9详情
Samsung Electronics M378B1G73BH0-CH9重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
ECCN (US)
4A994.a
Module
DRAM模块
Module Density
8Gbyte
Number of Chip per Module
16
Chip Density (bit)
4G
Data Bus Width (bit)
64
Max. Access Time (ns)
0.255
Maximum Clock Rate (MHz)
1333
Chip Configuration
512Mx8
Minimum Operating Supply Voltage (V)
1.425
Typical Operating Supply Voltage (V)
1.5
Maximum Operating Supply Voltage (V)
1.575
Operating Current (mA)
880
Minimum Operating Temperature (°C)
0
Maximum Operating Temperature (°C)
95
Module Sides
Double
ECC Support
无
Number of Ranks
Dual
Number of Chip Banks
8
CAS Latency
9
SPD EEPROM Support
有
Standard Package Name
DIM
Supplier Package
UDIMM
Mounting
Socket
Package Height
30
Package Length
133.35
Package Width
4(Max)
PCB changed
240
Lead Shape
No Lead
零件状态
Obsolete
引脚数量
240
组织结构
1Gx64
锁相环
无
自我刷新
有
模块类型
240UDIMM
RoHS状态
符合RoHS标准
M378B1G73BH0-CH9拓展信息
Samsung
Samsung
Samsung
Samsung
Samsung Semiconductor
Samsung
Samsung
Samsung Semiconductor
Samsung
Samsung







哦! 它是空的。