Samsung Electronics M470T2864EH3-CE6
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M470T2864EH3-CE6
2107-M470T2864EH3-CE6
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DRAM Module DDR2 SDRAM 1Gbyte 200SODIMM
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M470T2864EH3-CE6详情
Samsung Electronics M470T2864EH3-CE6重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
ECCN (US)
4A994.a
Module
DRAM模块
Module Density
1Gbyte
Number of Chip per Module
8
Chip Density (bit)
1G
Data Bus Width (bit)
64
Max. Access Time (ns)
0.45
Maximum Clock Rate (MHz)
667
Chip Configuration
64Mx16
Chip Package Type
FBGA
Minimum Operating Supply Voltage (V)
1.7
Typical Operating Supply Voltage (V)
1.8
Maximum Operating Supply Voltage (V)
1.9
Operating Current (mA)
428
Minimum Operating Temperature (°C)
0
Maximum Operating Temperature (°C)
95
Supplier Temperature Grade
Commercial
Module Sides
Double
ECC Support
无
Number of Ranks
Dual
Number of Chip Banks
8
CAS Latency
5
SPD EEPROM Support
有
Standard Package Name
DIM
Supplier Package
USODIMM
Mounting
Socket
Package Height
30
Package Length
67.6
Package Width
3.8(Max)
PCB changed
200
Lead Shape
No Lead
零件状态
Obsolete
引脚数量
200
组织结构
128Mx64
锁相环
无
自我刷新
有
模块类型
200SODIMM
RoHS状态
符合RoHS标准
M470T2864EH3-CE6拓展信息
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