Samsung Electronics M470T5267AZ3-CF7DE

ECCN (US)

4A994.a

Module

DRAM模块

Module Density

4Gbyte

Number of Chip per Module

16

Chip Density (bit)

4G(Stacked)

Data Bus Width (bit)

64

Max. Access Time (ns)

0.4

Maximum Clock Rate (MHz)

800

Chip Configuration

512Mx8

Chip Package Type

FBGA

Minimum Operating Supply Voltage (V)

1.7

Typical Operating Supply Voltage (V)

1.8

Maximum Operating Supply Voltage (V)

1.9

Operating Current (mA)

2080

Minimum Operating Temperature (°C)

0

Maximum Operating Temperature (°C)

95

Supplier Temperature Grade

Commercial

Module Sides

Double

ECC Support

无

Number of Ranks

Dual

Number of Chip Banks

8

CAS Latency

6

SPD EEPROM Support

有

Standard Package Name

DIM

Supplier Package

USODIMM

Mounting

Socket

Package Height

30

Package Length

67.6

Package Width

3.8(Max)

PCB changed

200

Lead Shape

No Lead

零件状态

Obsolete

引脚数量

200

组织结构

512Mx64

锁相环

无

自我刷新

有

模块类型

200SODIMM

RoHS状态

符合RoHS标准