Samsung Electronics M471A1G43DB0-CPB0
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M471A1G43DB0-CPB0
2107-M471A1G43DB0-CPB0
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DRAM Module DDR4 SDRAM 8Gbyte 260USODIMM
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M471A1G43DB0-CPB0详情
Samsung Electronics M471A1G43DB0-CPB0重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
ECCN (US)
EAR99
HTS
8542.32.00.71
Module
DRAM模块
Module Density
8Gbyte
Number of Chip per Module
16
Chip Density (bit)
4G
Data Bus Width (bit)
64
Maximum Clock Rate (MHz)
2133
Chip Configuration
512Mx8
Chip Package Type
78FBGA
Minimum Operating Supply Voltage (V)
1.14
Typical Operating Supply Voltage (V)
1.2
Maximum Operating Supply Voltage (V)
1.26
Operating Current (mA)
890
ECC Support
无
Number of Ranks
Dual
CAS Latency
15
Supplier Package
USODIMM
Mounting
Socket
Package Height
30
Package Length
69.6
Package Width
3.7(Max)
PCB changed
260
零件状态
Obsolete
引脚数量
260
组织结构
1Gx64
模块类型
260USODIMM
RoHS状态
符合RoHS标准
M471A1G43DB0-CPB0拓展信息
Samsung
Samsung
Samsung
Samsung
Samsung Semiconductor
Samsung
Samsung
Samsung Semiconductor
Samsung
Samsung







哦! 它是空的。