Samsung Electronics M471B5673EH1-CH9
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M471B5673EH1-CH9
2107-M471B5673EH1-CH9
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DRAM Module DDR3 SDRAM 2Gbyte 204USODIMM
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M471B5673EH1-CH9详情
Samsung Electronics M471B5673EH1-CH9重要参数规格及、参数值,及相似型号如下:
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- 参数名参数值全选
ECCN (US)
4A994.a
Module
DRAM模块
Module Density
2Gbyte
Number of Chip per Module
16
Chip Density (bit)
1G
Data Bus Width (bit)
64
Max. Access Time (ns)
20
Maximum Clock Rate (MHz)
1333
Chip Configuration
128Mx8
Chip Package Type
FBGA
Minimum Operating Supply Voltage (V)
1.425
Typical Operating Supply Voltage (V)
1.5
Maximum Operating Supply Voltage (V)
1.575
Operating Current (mA)
1360
Minimum Operating Temperature (°C)
0
Maximum Operating Temperature (°C)
95
Supplier Temperature Grade
Commercial
Module Sides
Double
ECC Support
无
Number of Ranks
Dual
Number of Chip Banks
8
CAS Latency
9
SPD EEPROM Support
有
Standard Package Name
DIM
Supplier Package
USODIMM
Mounting
Socket
Package Height
30
Package Length
67.6
Package Width
3.8(Max)
PCB changed
204
Lead Shape
No Lead
零件状态
Obsolete
引脚数量
204
组织结构
256Mx64
锁相环
无
自我刷新
有
模块类型
204USODIMM
RoHS状态
符合RoHS标准
M471B5673EH1-CH9拓展信息
Samsung
Samsung
Samsung
Samsung
Samsung Semiconductor
Samsung
Samsung
Samsung Semiconductor
Samsung
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