Samsung Electronics M474A1G43DB1-CRC000
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M474A1G43DB1-CRC000
2107-M474A1G43DB1-CRC000
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DRAM Module DDR4 SDRAM 8Gbyte 260USODIMM
1最小包装量--
M474A1G43DB1-CRC000详情
Samsung Electronics M474A1G43DB1-CRC000重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
ECCN (US)
EAR99
HTS
8542.32.00.71
Module
DRAM模块
Module Density
8Gbyte
Number of Chip per Module
18
Chip Density (bit)
4G
Data Bus Width (bit)
72
Maximum Clock Rate (MHz)
2400
Chip Configuration
512Mx8
Chip Package Type
78FBGA
Minimum Operating Supply Voltage (V)
1.14
Typical Operating Supply Voltage (V)
1.2
Maximum Operating Supply Voltage (V)
1.26
Operating Current (mA)
1100
ECC Support
有
Number of Ranks
Dual
CAS Latency
17
Supplier Package
USODIMM
Mounting
Socket
Package Height
30
Package Length
69.6
Package Width
3.7(Max)
PCB changed
260
零件状态
Obsolete
引脚数量
260
组织结构
1Gx72
模块类型
260USODIMM
M474A1G43DB1-CRC000拓展信息
Samsung Semiconductor
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung Semiconductor
Samsung
Samsung
Samsung








哦! 它是空的。