Semelab 2N6796

包装/外壳

TO-39-3

Vds - Drain-Source Breakdown Voltage

100 V

Typical Turn-On Delay Time

30 ns

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

25 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.039133 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

30

Mounting Styles

通孔

Channel Mode

Enhancement

Manufacturer

TT Electronics

Brand

Semelab / TT Electronics

Qg - Gate Charge

-

Rds On - Drain-Source Resistance

180 mOhms

RoHS

Details

Typical Turn-Off Delay Time

40 ns

Id - Continuous Drain Current

8 A

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

上升时间

75 ns

产品类别

MOSFET

晶体管类型

1 N-Channel

产品类别

MOSFET