STMicroelectronics ADP360120W3

安装类型

底座安装

包装/外壳

Module

供应商器件包装

ACEPACK

Package

Tray

Base Product Number

ADP360120

Current - Continuous Drain (Id) @ 25℃

379A (Tj)

厂商

STMicroelectronics

Product Status

活跃

Vr - Reverse Voltage

-

Vds - Drain-Source Breakdown Voltage

1.2 kV

Vgs th - Gate-Source Threshold Voltage

4.4 V

Pd - Power Dissipation

704 W

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 10 V, + 22 V

Unit Weight

1.609 lbs

Minimum Operating Temperature

- 40 C

Mounting Styles

螺钉安装

Manufacturer

STMicroelectronics

Brand

STMicroelectronics

Rds On - Drain-Source Resistance

2.55 mOhms

RoHS

Details

Id - Continuous Drain Current

379 A

操作温度

-40°C ~ 175°C (TJ)

系列

-

包装

Tray

类型

SiC Power MOSFET Module

子类别

Discrete Semiconductor Modules

技术

Silicon Carbide (SiC)

配置

6 N-Channel

功率 - 最大

704W (Tj)

Rds On(Max)@Id,Vgs

3.45mOhm @ 360A, 18V

不同 Id 时 Vgs(th)（最大值）

4.4V @ 40mA

输入电容(Ciss)(Max)@Vds

28070pF @ 800V

门极电荷(Qg)(最大)@Vgs

944nC @ 18V

漏源电压 (Vdss)

1200V (1.2kV)

产品类别

Discrete Semiconductor Modules

场效应管特性

-

产品

功率MOSFET模块

Vf-正向电压

4.3 V

产品类别

Discrete Semiconductor Modules