STMicroelectronics PD85015TRM-E

ECCN (US)

EAR99

HTS

8541.29.00.95

Channel Mode

Enhancement

Number of Elements per Chip

1

Process Technology

LDMOS

Maximum Drain Source Voltage (V)

40

Maximum Gate Source Voltage (V)

15

Maximum VSWR

20(Min)

Maximum Continuous Drain Current (A)

5

Typical Input Capacitance @ Vds (pF)

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Typical Reverse Transfer Capacitance @ Vds (pF)

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Typical Output Capacitance @ Vds (pF)

[email protected]

Maximum Power Dissipation (mW)

59000

Output Power (W)

20(Typ)

Typical Power Gain (dB)

16(Min)

Maximum Frequency (MHz)

1000

Typical Drain Efficiency (%)

70

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

165

Standard Package Name

PowerSO-10RF (Formed lead)

Supplier Package

PowerSO-10RF (Formed lead)

Military

无

Mounting

表面贴装

Package Height

3.5

Package Length

9.5

Package Width

9.4

PCB changed

3

Lead Shape

Gull-wing

Package

Tape & Reel (TR)

厂商

STMicroelectronics

Product Status

Obsolete

包装

卷带

系列

*

零件状态

活跃

引脚数量

3

配置

Single

信道型

N

RoHS状态

是,有豁免