STMicroelectronics RF2L42008CG2

包装/外壳

E2-3

安装类型

表面贴装

供应商器件包装

E2

RoHS

Details

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

65 V

Rds On - Drain-Source Resistance

1.5 Ohms

Maximum Operating Temperature

+ 200 C

Mounting Styles

SMD/SMT

Moisture Sensitive

有

Factory Pack QuantityFactory Pack Quantity

300

Vgs - Gate-Source Voltage

- 6 V to 10 V

Vgs th - Gate-Source Threshold Voltage

2.5 V

Package

Bulk

Base Product Number

RF2L42008

厂商

STMicroelectronics

Product Status

活跃

Voltage Rated

65 V

包装

Reel

系列

-

类型

射频功率MOSFET

额定电流

1µA

频率

700MHz ~ 4.2GHz

工作频率

3.6 GHz

配置

-

通道数量

1 Channel

输出功率

8 W

晶体管类型

LDMOS FET

增益

14.5 dB

功率 - 输出

8W

噪声图

-