STMicroelectronics RF3L05150CB4

安装类型

表面贴装

包装/外壳

LBB-4

供应商器件包装

LBB

Continuous Drain Current Id

-

Number of Elements per Chip

1

Package Type

LBB

Vds - Drain-Source Breakdown Voltage

28 V

Transistor Polarity

N-Channel

Vgs - Gate-Source Voltage

-

Unit Weight

0.084658 oz

Factory Pack QuantityFactory Pack Quantity

100

Mounting Styles

通孔

Manufacturer

STMicroelectronics

Brand

STMicroelectronics

RoHS

Details

Id - Continuous Drain Current

-

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

厂商

STMicroelectronics

Product Status

活跃

Voltage Rated

90 V

Maximum Operating Temperature

+ 200 C

Minimum Operating Temperature

-

Rds On - Drain-Source Resistance

1 Ohms

系列

RF3L05150CB4

包装

切割胶带

类型

射频功率MOSFET

子类别

MOSFETs

额定电流

1µA

技术

Si

频率

1GHz

引脚数量

5

工作频率

945 MHz

通道数量

1 Channel

功率耗散

150W

输出功率

150 W

测试电流

500 mA

产品类别

射频MOSFET晶体管

晶体管类型

LDMOS FET

增益

16 dB

信道型

N通道

功率 - 输出

150W

噪声图

-

电压-测试

28 V

产品类别

射频MOSFET晶体管