STMicroelectronics SD2932IW
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SD2932IW
2381-SD2932IW
晶体管 - FET,MOSFET - 射频
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Trans RF MOSFET N-CH 125V 40A 5-Pin Case M-244 Tube
1最小包装量--
SD2932IW详情
STMicroelectronics SD2932IW重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
ECCN (US)
EAR99
Channel Mode
Enhancement
Number of Elements per Chip
2
Maximum Drain Source Voltage (V)
125
Maximum Gate Source Voltage (V)
±20
Maximum VSWR
5(Min)
Maximum Continuous Drain Current (A)
40
Typical Input Capacitance @ Vds (pF)
480@50V
Typical Reverse Transfer Capacitance @ Vds (pF)
18@50V
Typical Output Capacitance @ Vds (pF)
190@50V
Typical Forward Transconductance (S)
5(Min)
Maximum Power Dissipation (mW)
500000
Output Power (W)
300(Min)
Typical Power Gain (dB)
16
Maximum Frequency (MHz)
250
Typical Drain Efficiency (%)
60
Minimum Operating Temperature (°C)
-65
Maximum Operating Temperature (°C)
150
AEC Qualified
无
Supplier Package
Case M-244
Military
无
Mounting
Screw
Package Height
5.84(Max)
Package Length
34.16(Max)
Package Width
10.34(Max)
PCB changed
5
包装
Tube
零件状态
Obsolete
引脚数量
5
配置
双共源
信道型
N
RoHS状态
符合RoHS标准
SD2932IW拓展信息
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