STMicroelectronics ST24180
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ST24180
2381-ST24180
晶体管 - FET,MOSFET - 射频
B2-3
大陆
立即发货

RF MOSFET Transistors 180 W, 32 V, 2.3 to 2.5 GHz RF Power LDMOS transistorComplete Your Design
1最小包装量--
ST24180详情
STMicroelectronics ST24180重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
B2-3
安装类型
表面贴装
供应商器件包装
B2
RoHS
Details
Transistor Polarity
N-Channel
Id - Continuous Drain Current
-
Vds - Drain-Source Breakdown Voltage
65 V
Maximum Operating Temperature
+ 200 C
Mounting Styles
SMD/SMT
Factory Pack QuantityFactory Pack Quantity
120
Vgs - Gate-Source Voltage
- 6 V, + 10 V
Vgs th - Gate-Source Threshold Voltage
2.5 V
Package
Bulk
Base Product Number
ST241
厂商
STMicroelectronics
Product Status
活跃
Voltage Rated
65 V
包装
Reel
系列
-
类型
射频功率MOSFET
额定电流
1µA
频率
2.3GHz ~ 2.5GHz
工作频率
2350 MHz
配置
-
通道数量
1 Channel
输出功率
180 W
晶体管类型
LDMOS FET
增益
15.3 dB
功率 - 输出
180W
噪声图
-
ST24180拓展信息
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