STMicroelectronics ST50V10100
- 收藏
- 对比
ST50V10100
2381-ST50V10100
晶体管 - FET,MOSFET - 射频
M243-3
大陆
立即发货

RF MOSFET Transistors RF Power LDMOS transistor for frequencies up to 1.5 GHzComplete Your Design
1最小包装量--
ST50V10100详情
STMicroelectronics ST50V10100重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
M243-3
安装类型
底座安装
供应商器件包装
M243
RoHS
Details
Transistor Polarity
N-Channel
Id - Continuous Drain Current
18 A
Vds - Drain-Source Breakdown Voltage
100 V
Maximum Operating Temperature
+ 200 C
Mounting Styles
SMD/SMT
Factory Pack QuantityFactory Pack Quantity
50
Vgs - Gate-Source Voltage
- 8 V, + 10 V
Vgs th - Gate-Source Threshold Voltage
3 V
Continuous Drain Current Id
18
Package
Bulk
Base Product Number
ST50
厂商
STMicroelectronics
Product Status
活跃
Voltage Rated
110 V
包装
Bulk
系列
-
类型
射频功率MOSFET
额定电流
18A
频率
-
工作频率
1000 MHz
配置
-
通道数量
1 Channel
输出功率
100 W
晶体管类型
LDMOS FET
增益
18 dB
功率 - 输出
100W
噪声图
-
ST50V10100拓展信息
STMicroelectronics
STMicroelectronics
STMicroelectronics
STMicroelectronics
STMicroelectronics
STMicroelectronics
STMicroelectronics
STMicroelectronics
STMicroelectronics
STMicroelectronics







哦! 它是空的。