STMicroelectronics ST50V10200
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ST50V10200
2381-ST50V10200
晶体管 - FET,MOSFET - 射频
M246-5
大陆
立即发货

RF MOSFET Transistors 200 W, 50 V, HF to 1.5GHz RF Power LDMOS transistorComplete Your Design
1最小包装量--
ST50V10200详情
STMicroelectronics ST50V10200重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
M246-5
安装类型
底座安装
供应商器件包装
M246
RoHS
Details
Transistor Polarity
N-Channel
Id - Continuous Drain Current
-
Vds - Drain-Source Breakdown Voltage
110 V
Maximum Operating Temperature
+ 200 C
Mounting Styles
SMD/SMT
Factory Pack QuantityFactory Pack Quantity
60
Vgs - Gate-Source Voltage
- 8 V, + 10 V
Vgs th - Gate-Source Threshold Voltage
3 V
Package
Bulk
Base Product Number
ST50
厂商
STMicroelectronics
Product Status
活跃
Voltage Rated
110 V
包装
Bulk
系列
-
类型
射频功率MOSFET
额定电流
1µA
频率
-
工作频率
1000 MHz
配置
N-Channel
通道数量
1 Channel
输出功率
200 W
晶体管类型
LDMOS FET
增益
18 dB
功率 - 输出
225W
噪声图
-
ST50V10200拓展信息
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