Taiwan Semiconductor TSM10ND60CI C0G

包装/外壳

ITO-220-3

Vds - Drain-Source Breakdown Voltage

600 V

Typical Turn-On Delay Time

11 ns

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

56.8 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Id - Continuous Drain Current

10 A

Typical Turn-Off Delay Time

33 ns

RoHS

Details

Rds On - Drain-Source Resistance

600 mOhms

Qg - Gate Charge

38 nC

Brand

台湾半导体

Manufacturer

台湾半导体

Part # Aliases

TSM10ND60CI

Channel Mode

Enhancement

Mounting Styles

通孔

Factory Pack QuantityFactory Pack Quantity

4000

Minimum Operating Temperature

- 55 C

Unit Weight

0.211644 oz

Vgs - Gate-Source Voltage

- 30 V, + 30 V

系列

TSM10ND60CI

包装

Tube

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

上升时间

20 ns

产品类别

MOSFET

晶体管类型

1 N-Channel

产品类别

MOSFET