Taiwan Semiconductor TSM1N80CW

包装/外壳

SOT-223-4

Vds - Drain-Source Breakdown Voltage

800 V

Typical Turn-On Delay Time

10 ns

Vgs th - Gate-Source Threshold Voltage

5 V

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Unit Weight

0.008818 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2500

Mounting Styles

SMD/SMT

Forward Transconductance - Min

0.36 S

Channel Mode

Enhancement

Manufacturer

台湾半导体

Brand

台湾半导体

Qg - Gate Charge

5 nC

Rds On - Drain-Source Resistance

18 Ohms

RoHS

Details

Typical Turn-Off Delay Time

16 ns

Id - Continuous Drain Current

300 mA

包装

Reel

类型

N-Channel

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

上升时间

20 ns

产品类别

MOSFET

晶体管类型

1 N-Channel

产品类别

MOSFET