Taiwan Semiconductor TSM250NB06CV RGG

安装类型

表面贴装

包装/外壳

8-PowerWDFN

供应商器件包装

8-PDFN (3.15x3.1)

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Base Product Number

TSM250

Current - Continuous Drain (Id) @ 25℃

6A (Ta), 28A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

7V, 10V

厂商

Taiwan Semiconductor Corporation

Power Dissipation (Max)

1.9W (Ta), 42W (Tc)

Product Status

活跃

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4V @ 250µA

操作温度

-55°C ~ 150°C (TJ)

系列

-

技术

MOSFET (Metal Oxide)

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

25mOhm @ 6A, 10V

输入电容(Ciss)(Max)@Vds

1440 pF @ 30 V

门极电荷(Qg)(最大)@Vgs

23 nC @ 10 V

漏源电压 (Vdss)

60 V

Vgs（最大值）

±20V

场效应管特性

-