Taiwan Semiconductor TSM2N7002KCX

包装/外壳

SOT-23-3

Vds - Drain-Source Breakdown Voltage

60 V

Typical Turn-On Delay Time

25 ns

Vgs th - Gate-Source Threshold Voltage

1 V

Pd - Power Dissipation

300 mW

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.000282 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

100 mS

Channel Mode

Enhancement

Manufacturer

台湾半导体

Brand

台湾半导体

Qg - Gate Charge

400 pC

Rds On - Drain-Source Resistance

1.2 Ohms

RoHS

Details

Typical Turn-Off Delay Time

35 ns

Id - Continuous Drain Current

300 mA

包装

Reel

类型

N-Channel

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

产品类别

MOSFET

晶体管类型

1 N-Channel

产品类别

MOSFET