Taiwan Semiconductor TSM60N1R4CH

生命周期状态

NRND (Last Updated: 2 years ago)

包装/外壳

TO-251-3

Manufacturer

TAIWAN SEMICONDUCTOR

Vds - Drain-Source Breakdown Voltage

600 V

Typical Turn-On Delay Time

14 ns

Vgs th - Gate-Source Threshold Voltage

2 V

Pd - Power Dissipation

38 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.011993 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1875

Mounting Styles

通孔

Channel Mode

Enhancement

Part # Aliases

TSM60N1R4CH C5G

Brand

台湾半导体

Qg - Gate Charge

7.7 nC

Rds On - Drain-Source Resistance

880 mOhms

RoHS

Details

Typical Turn-Off Delay Time

24 ns

Id - Continuous Drain Current

3.3 A

Breakdown Voltage / V

51 V

Reverse Stand-off Voltage

24 V

Manufacturer Lifecycle Status

NRND (Last Updated: 2 years ago)

包装

TO-251 (I-PAK)

电容量

Ciss - 370pF

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

电压

VDS - 600V

功率耗散

200 mW

最大反向漏电电流

1 µA

箝位电压

70.1 V

峰值脉冲电流

21.4 A

峰值脉冲功率

1.5 kW

测试电流

2.5 mA

上升时间

22 ns

漏源电压 (Vdss)

600 V

正向电压

1 V

齐纳电压

75 V

产品类别

MOSFET

晶体管类型

1 N-Channel

反向恢复时间

50 ns

最大重复反向电压(Vrrm)

250 V

栅极至源极电压(Vgs)

3 V

输入电容

370 pF

最大击穿电压

9.8 V

最大正向浪涌电流（Ifsm）

2.5 A

最大结点温度（Tj）

150 °C

最小击穿电压

25.4 V

产品类别

MOSFET