Texas Instruments MMBFJ112

表面安装

YES

Housing material

GF - Nilon-6T (UL94V-0)

终端数量

3

晶体管元件材料

SILICON

外壳材料

1

Rohs Code

无

Part Life Cycle Code

Transferred

Ihs Manufacturer

NATIONAL SEMICONDUCTOR CORP

Package Description

SMALL OUTLINE, R-PDSO-G3

Operating Temperature-Max

150 °C

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

小概要

Gross weight

0.38

Transport packaging size/quantity

63*32.5*27/5040

Noal current

1Amin

Mounting method

surface mount on board

Additional

without mounting pins

Dielectric strength

500 (50 Hz, 1 min.) V

JESD-609代码

e0

ECCN 代码

EAR99

Connector type

F - socket

端子表面处理

Tin/Lead (Sn/Pb)

端子位置

DUAL

终端形式

鸥翼

深度

3.0 (housing) mm

Reach合规守则

unknown

JESD-30代码

R-PDSO-G3

资历状况

不合格

Number of contacts

10 (2 x 5) with 1.27mm pitch

Contact resistance

≤30 at IDC=100 mA mΩ

配置

SINGLE

Insulation resistance

≥1000 (at Udc=500 V) MΩ

操作模式

DEPLETION MODE

晶体管应用

SWITCHING

极性/通道类型

N-CHANNEL

Operating temperature range

-55…+105 °C

JEDEC-95代码

TO-236AB

场效应管技术

JUNCTION

最大耗散功率(Abs)

0.35 W

高度

4.55* mm

宽度

6.75* mm