Toshiba 2SC2712-Y,LF(B

Emitter- Base Voltage VEBO

5 V

Pd - Power Dissipation

150 mW

Transistor Polarity

NPN

Maximum Operating Temperature

+ 125 C

DC Collector/Base Gain hfe Min

70

Collector-Emitter Saturation Voltage

250 mV

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Gain Bandwidth Product fT

80 MHz

Manufacturer

Toshiba

Brand

Toshiba

Maximum DC Collector Current

150 mA

DC Current Gain hFE Max

700

Collector- Emitter Voltage VCEO Max

50 V

RoHS

Non-Compliant

子类别

Transistors

技术

Si

配置

Single

产品类别

BJTs - Bipolar Transistors

集电极基极电压(VCBO)

60 V

连续集电极电流

150 mA

产品类别

Bipolar Transistors - BJT

宽度

1.5 mm

高度

1.1 mm

长度

2.9 mm