Toshiba 2SC5354-1(F)

包装/外壳

TO-3P-N-3

Emitter-Base Voltage

7(V)

Operating Temperature Classification

Military

Package Type

TO-3PN

Transistor Polarity

NPN

Collector-Base Voltage

900(V)

Category

双极电源

Operating Temp Range

-55C to 150C

Collector Current (DC)

5(A)

Number of Elements

1

Rad Hardened

无

Collector-Emitter Voltage

800(V)

Mounting

通孔

Emitter- Base Voltage VEBO

7 V

Pd - Power Dissipation

100 W

Maximum Operating Temperature

+ 150 C

DC Collector/Base Gain hfe Min

15

Collector-Emitter Saturation Voltage

1 V

Unit Weight

0.194007 oz

Minimum Operating Temperature

-

Factory Pack QuantityFactory Pack Quantity

50

Mounting Styles

通孔

Gain Bandwidth Product fT

-

Manufacturer

Toshiba

Brand

Toshiba

Maximum DC Collector Current

5 A

DC Current Gain hFE Max

60

RoHS

Details

Collector- Emitter Voltage VCEO Max

800 V

包装

SACK

系列

2SC5354

子类别

Transistors

技术

Si

引脚数量

3 +Tab

配置

Single

功率耗散

100(W)

输出功率

Not Required(W)

产品类别

BJTs - Bipolar Transistors

集电极基极电压(VCBO)

900 V

连续集电极电流

5 A

产品类别

Bipolar Transistors - BJT