Toshiba 2SC3326-B(TE85L,F)

工厂交货时间

16 Weeks

包装/外壳

SOT-346-3

表面安装

YES

终端数量

3

Transistor Polarity

NPN

Emitter- Base Voltage VEBO

25 V

Pd - Power Dissipation

150 mW

Maximum Operating Temperature

+ 125 C

DC Collector/Base Gain hfe Min

200

Collector-Emitter Saturation Voltage

42 mV

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Gain Bandwidth Product fT

30 MHz

Manufacturer

Toshiba

Brand

Toshiba

Maximum DC Collector Current

300 mA

DC Current Gain hFE Max

1200

RoHS

Details

Collector- Emitter Voltage VCEO Max

20 V

Package Description

SMALL OUTLINE, R-PDSO-G3

Package Style

小概要

Operating Temperature-Max

125 °C

Rohs Code

有

Transition Frequency-Nom (fT)

30 MHz

Manufacturer Part Number

2SC3326-B(TE85L,F)

Part Life Cycle Code

活跃

Ihs Manufacturer

TOSHIBA CORP

Risk Rank

5.7

系列

2SC3326

包装

Reel

子类别

Transistors

技术

Si

Reach合规守则

unknown

JESD-30代码

R-PDSO-G3

配置

Single

功率耗散

150

晶体管应用

SWITCHING

极性/通道类型

NPN

产品类别

BJTs - Bipolar Transistors

转换频率

30

集电极基极电压(VCBO)

50 V

最大耗散功率(Abs)

0.15 W

集电极电流-最大值(IC)

0.3 A

最小直流增益（hFE）

350

连续集电极电流

300

集电极-发射器电压-最大值

20 V

VCEsat-最大值

0.1 V

集电极-基极电容-最大值

7 pF

环境耗散-最大值

0.15 W

产品类别

Bipolar Transistors - BJT