Toshiba RN2132MFV(TPL3)

Collector- Emitter Voltage VCEO Max

- 50 V

RoHS

Details

DC Current Gain hFE Max

400

Brand

Toshiba

Manufacturer

Toshiba

Mounting Styles

SMD/SMT

Factory Pack QuantityFactory Pack Quantity

8000

Minimum Operating Temperature

- 65 C

Typical Input Resistor

200 kOhms

DC Collector/Base Gain hfe Min

120

Maximum Operating Temperature

+ 150 C

Transistor Polarity

PNP

Pd - Power Dissipation

150 mW

Emitter- Base Voltage VEBO

- 5 V

包装

MouseReel

系列

RN2132

类型

PNP Epitaxial Silicon Transistor

子类别

Transistors

产品类别

BJTs - Bipolar Transistors - Pre-Biased

工作温度范围

- 65 C to + 150 C

集电极基极电压(VCBO)

- 50 V

连续集电极电流

- 100 mA

产品类别

Bipolar Transistors - Pre-Biased

宽度

0.5 mm

高度

1.2 mm

长度

1.2 mm