Toshiba RN1111MFV(TPL3)

包装/外壳

VESM-3

Emitter- Base Voltage VEBO

5 V

Pd - Power Dissipation

150 mW

Transistor Polarity

NPN

Maximum Operating Temperature

+ 150 C

DC Collector/Base Gain hfe Min

700

Factory Pack QuantityFactory Pack Quantity

8000

Mounting Styles

SMD/SMT

Manufacturer

Toshiba

Brand

Toshiba

DC Current Gain hFE Max

120 @ 1mA @ 5V

RoHS

Details

Collector- Emitter Voltage VCEO Max

50 V

系列

RN1111MFV

包装

MouseReel

子类别

Transistors

配置

Single

产品类别

BJTs - Bipolar Transistors - Pre-Biased

集电极基极电压(VCBO)

50 V

连续集电极电流

100 mA

产品类别

Bipolar Transistors - Pre-Biased

宽度

0.8 mm

高度

0.5 mm

长度

1.2 mm