Toshiba RN1111(TE85L,F)

包装/外壳

SSM-3

Emitter- Base Voltage VEBO

5 V

Pd - Power Dissipation

100 mW

Transistor Polarity

NPN

Maximum Operating Temperature

+ 150 C

DC Collector/Base Gain hfe Min

120

Typical Input Resistor

10 kOhms

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Peak DC Collector Current

100 mA

Manufacturer

Toshiba

Brand

Toshiba

Maximum Operating Frequency

250 MHz

DC Current Gain hFE Max

700

RoHS

Details

Collector- Emitter Voltage VCEO Max

50 V

系列

RN1111

包装

MouseReel

子类别

Transistors

配置

Single

产品类别

BJTs - Bipolar Transistors - Pre-Biased

工作温度范围

- 55 C to + 150 C

集电极基极电压(VCBO)

50 V

连续集电极电流

100 mA

产品类别

Bipolar Transistors - Pre-Biased