Toshiba RN1114MFV(TPL3)

安装类型

表面贴装

Number of Elements per Chip

1

Dimensions

1.2 x 0.8 x 0.5mm

Typical Resistor Ratio

0.1

Package Type

VESM

Maximum Operating Temperature

+150 °C

Typical Input Resistor

1 kΩ

Maximum Collector Emitter Voltage

50 V

Maximum DC Collector Current

100 mA

Emitter- Base Voltage VEBO

5 V

Pd - Power Dissipation

150 mW

Transistor Polarity

NPN

DC Collector/Base Gain hfe Min

50

Minimum Operating Temperature

- 65 C

Factory Pack QuantityFactory Pack Quantity

8000

Mounting Styles

SMD/SMT

Manufacturer

Toshiba

Brand

Toshiba

RoHS

Details

Collector- Emitter Voltage VCEO Max

50 V

系列

RN1114MFV

包装

MouseReel

类型

NPN Epitaxial Silicon Transistor

子类别

Transistors

引脚数量

3

产品类别

BJTs - Bipolar Transistors - Pre-Biased

晶体管类型

NPN

工作温度范围

- 65 C to + 150 C

集电极基极电压(VCBO)

50 V

连续集电极电流

100 mA

产品类别

Bipolar Transistors - Pre-Biased

宽度

0.5 mm

高度

1.2 mm

长度

1.2 mm