Toshiba RN2107MFV(TPL3)

底架

表面贴装

引脚数

3

Collector-Emitter Breakdown Voltage

50 V

hFEMin

80

RoHS

Compliant

Typical Resistor Ratio

0.213

Pd - Power Dissipation

150 mW

Transistor Polarity

PNP

Maximum Operating Temperature

+ 150 C

DC Collector/Base Gain hfe Min

80

Typical Input Resistor

10 kOhms

Factory Pack QuantityFactory Pack Quantity

8000

Mounting Styles

SMD/SMT

Peak DC Collector Current

100 mA

Manufacturer

Toshiba

Brand

Toshiba

DC Current Gain hFE Max

80

Collector- Emitter Voltage VCEO Max

50 V

包装

Tape & Reel (TR)

系列

RN2107MF

最高工作温度

150 °C

子类别

Transistors

最大功率耗散

150 mW

极性

PNP

配置

Single

元素配置

Single

功率耗散

150 mW

产品类别

BJTs - Bipolar Transistors - Pre-Biased

集电极发射器电压(VCEO)

50 V

最大集电极电流

100 mA

连续集电极电流

-100 mA

产品类别

Bipolar Transistors - Pre-Biased

辐射硬化

无