Toshiba RN2131MFV(TPL3)

包装/外壳

SOT-723

Emitter- Base Voltage VEBO

- 5 V

Pd - Power Dissipation

150 mW

Transistor Polarity

PNP

Maximum Operating Temperature

+ 150 C

DC Collector/Base Gain hfe Min

120

Typical Input Resistor

100 kOhms

Minimum Operating Temperature

- 65 C

Factory Pack QuantityFactory Pack Quantity

8000

Mounting Styles

SMD/SMT

Peak DC Collector Current

100 mA

Manufacturer

Toshiba

Brand

Toshiba

DC Current Gain hFE Max

400

RoHS

Details

Collector- Emitter Voltage VCEO Max

- 50 V

系列

RN2131

包装

MouseReel

类型

PNP Epitaxial Silicon Transistor

子类别

Transistors

配置

Single

产品类别

BJTs - Bipolar Transistors - Pre-Biased

工作温度范围

- 65 C to + 150 C

集电极基极电压(VCBO)

- 50 V

连续集电极电流

- 100 mA

产品类别

Bipolar Transistors - Pre-Biased

宽度

0.8 mm

高度

0.5 mm

长度

1.2 mm